TP2635N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,P-CHANNEL ENHANCEMENT-MODE,-350V,15 Ohm3 TO-92BAG
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Buying Options
Total Price: USD $1.76
Unit Price: USD $1.76
≥1 USD $1.76
≥10 USD $1.4608
≥100 USD $1.3288
Inventory: 369
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 4.19mm
Length 5.21mm
Height 5.33mm
Technical
Drain to Source Breakdown Voltage -350V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -180mA
Turn-Off Delay Time 60 ns
Fall Time (Typ) 40 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Drain to Source Voltage (Vdss) 350V
Rise Time 15 ns
Current - Continuous Drain (Id) @ 25°C 180mA Tj
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 15 Ω @ 300mA, 10V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 10 ns
Power Dissipation 1W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Number of Channels 1
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Published 2013
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 5 Weeks
Alternative Model
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