Drain to Source Breakdown Voltage 400V
Drain-source On Resistance-Max 30Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 125mA
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25°C 125mA Tj
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Rds On (Max) @ Id, Vgs 25 Ω @ 100mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ