TP2540N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH 400V 0.086A 3-Pin TO-92
PDF
/
Buying Options
Total Price: USD $1.57
Unit Price: USD $1.5664
≥1 USD $1.5664
≥10 USD $1.3112
≥100 USD $1.188
Inventory: 991
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 740mW
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Current - Continuous Drain (Id) @ 25°C 86mA Tj
Rise Time 10 ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 86mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.086A
Drain to Source Breakdown Voltage -400V
Feedback Cap-Max (Crss) 25 pF
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
TP2540N3-G+price,TP2540N3-G+datasheet,TP2540N3-G+in stock,buy+TP2540N3-G,finder+TP2540N3-G,TP2540N3-G+tutorials,TP2540N3-G+download