TP2510N8-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH 100V 0.48A 4-Pin(3+Tab) SOT-89
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Buying Options
Total Price: USD $1.36
Unit Price: USD $1.3552
≥1 USD $1.3552
≥10 USD $1.1264
≥100 USD $1.012
Inventory: 16704
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 52.786812mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Pulsed Drain Current-Max (IDM) 2.5A
Drain to Source Breakdown Voltage -100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 480mA
Turn-Off Delay Time 20 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Rise Time 15 ns
Current - Continuous Drain (Id) @ 25°C 480mA Tj
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Rds On (Max) @ Id, Vgs 3.5 Ω @ 750mA, 10V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 10 ns
Case Connection DRAIN
Power Dissipation 1.6W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Number of Channels 1
Number of Elements 1
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 2.6mm
Length 4.6mm
Height 1.6mm
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