Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120mA
Turn-Off Delay Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120mA Tj
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Rds On (Max) @ Id, Vgs 10 Ω @ 200mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360mW Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature LOW THRESHOLD
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ