TP0606N3-G-P002
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH Enhancmnt Mode MOSFET
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 4.19mm
Length 5.21mm
Height 5.33mm
Technical
Feedback Cap-Max (Crss) 35 pF
Drain to Source Breakdown Voltage -60V
Drain Current-Max (Abs) (ID) 0.32A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 320mA
Turn-Off Delay Time 20 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 60V
Rise Time 15ns
Current - Continuous Drain (Id) @ 25°C 320mA Tj
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Rds On (Max) @ Id, Vgs 3.5 Ω @ 750mA, 10V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 10 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code O-PBCY-T3
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2011
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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