TN5335N8-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 350V 15Ohm
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Buying Options
Total Price: USD $1
Unit Price: USD $1.0032
≥1 USD $1.0032
≥10 USD $0.836
≥100 USD $0.7656
Inventory: 1445
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 2.6mm
Length 4.6mm
Height 1.6mm
Technical
Drain to Source Breakdown Voltage 350V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 230mA
Turn-Off Delay Time 25 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Rise Time 15 ns
Current - Continuous Drain (Id) @ 25°C 230mA Tj
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 15 Ω @ 200mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Case Connection DRAIN
Power Dissipation 1.6W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Number of Channels 1
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-F3
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Form FLAT
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 52.786812mg
Package / Case TO-243AA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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