TN5335K1-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Mosfet, N-channel Enhancement-mode, 350V, 15 Ohm 3 SOT-23 1.3MM T/r
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Buying Options
Total Price: USD $0.88
Unit Price: USD $0.88
≥1 USD $0.88
≥10 USD $0.7304
≥100 USD $0.6688
Inventory: 1078
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110mA Tj
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 110mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 350V
Feedback Cap-Max (Crss) 22 pF
Dimensions
Height 950μm
Length 2.9mm
Width 1.3mm
Compliance
RoHS Status ROHS3 Compliant
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