Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 215mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 7Ohm
Drain to Source Breakdown Voltage 250V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25°C 215mA Ta
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 7 Ω @ 1A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 740mW Ta
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)