Drain to Source Breakdown Voltage 400V
Drain Current-Max (Abs) (ID) 0.57A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 260mA
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25°C 260mA Tj
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 12 Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ