Pulsed Drain Current-Max (IDM) 2A
Drain to Source Breakdown Voltage 240V
Drain-source On Resistance-Max 6Ohm
Drain Current-Max (Abs) (ID) 0.36A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 360mA
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25°C 360mA Tj
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Tc
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ