TN2510N8-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 100V 0.73A 4-Pin(3+Tab) SOT-89
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Buying Options
Total Price: USD $1.91
Unit Price: USD $1.913823
≥1 USD $1.913823
≥10 USD $1.643036
≥100 USD $1.472977
≥500 USD $6.1959
≥1000 USD $5.98975
Inventory: 17
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 52.786812mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Current - Continuous Drain (Id) @ 25°C 730mA Tj
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 730mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.73A
Drain-source On Resistance-Max 2Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 5A
Dimensions
Height 1.6mm
Length 4.6mm
Width 2.6mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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