Drain to Source Breakdown Voltage 40V
Drain-source On Resistance-Max 1Ohm
Drain Current-Max (Abs) (ID) 0.89A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 890mA
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Current - Continuous Drain (Id) @ 25°C 890mA Tj
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 20V
Vgs(th) (Max) @ Id 1.6V @ 1mA
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ