Pulsed Drain Current-Max (IDM) 0.56A
Drain to Source Breakdown Voltage 18V
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 400mA
Turn-Off Delay Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 3V
Current - Continuous Drain (Id) @ 25°C 400mA Tj
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 2.5 Ω @ 200mA, 3V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ