TN2130K1-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 300V 0.085A 3-Pin SOT-23
PDF
/
Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4048
≥1 USD $0.4048
≥10 USD $0.3256
≥100 USD $0.308
Inventory: 1263
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25 Ω @ 120mA, 4.5V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 85mA Tj
Rise Time 7 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 85mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.085A
Drain to Source Breakdown Voltage 300V
Feedback Cap-Max (Crss) 5 pF
Dimensions
Height 950μm
Length 2.9mm
Width 1.3mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
TN2130K1-G+price,TN2130K1-G+datasheet,TN2130K1-G+in stock,buy+TN2130K1-G,finder+TN2130K1-G,TN2130K1-G+tutorials,TN2130K1-G+download