TN0604N3-G-P013
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,N-CHANNEL ENHANCEMENT-MODE,40V,0.75 Ohm3 TO-92AMMO
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Inventory: 1109
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code O-PBCY-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 1.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 20V
Current - Continuous Drain (Id) @ 25°C 700mA Tj
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 700mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.7A
Drain-source On Resistance-Max 0.75Ohm
Drain to Source Breakdown Voltage 40V
Feedback Cap-Max (Crss) 50 pF
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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