TN0604N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 700MA TO92-3
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Buying Options
Total Price: USD $13.05
Unit Price: USD $13.0492
≥1 USD $13.0492
≥10 USD $10.7065
≥100 USD $10.3721
≥500 USD $10.0377
≥1000 USD $9.7033
Inventory: 1163
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.19mm
Length 5.21mm
Height 5.33mm
Technical
Feedback Cap-Max (Crss) 50 pF
Drain to Source Breakdown Voltage 40V
Drain-source On Resistance-Max 0.75Ohm
Drain Current-Max (Abs) (ID) 0.7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 700mA
Turn-Off Delay Time 25 ns
Fall Time (Typ) 20 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Rise Time 6 ns
Current - Continuous Drain (Id) @ 25°C 700mA Tj
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 20V
Vgs(th) (Max) @ Id 1.6V @ 1mA
Rds On (Max) @ Id, Vgs 750m Ω @ 1.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 10 ns
Power Dissipation 740mW
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 740mW Ta
Number of Channels 1
Number of Elements 1
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature HIGH INPUT IMPEDANCE
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Published 2013
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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