TN0104N3-G-P003
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,N-CHANNEL ENHANCEMENT-MODE,40V,1.8 Ohm3 TO-92T/R
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Buying Options
Total Price: USD $1.1
Unit Price: USD $1.102308
≥1 USD $1.102308
≥10 USD $1.03991
≥100 USD $0.981051
≥500 USD $0.925518
≥1000 USD $0.873124
Inventory: 1090
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 9 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code O-PBCY-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 1.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 20V
Current - Continuous Drain (Id) @ 25°C 450mA Ta
Rise Time 7ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 450mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.45A
DS Breakdown Voltage-Min 40V
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
RoHS Status ROHS3 Compliant
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