Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 1.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 20V
Current - Continuous Drain (Id) @ 25°C 450mA Ta
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Continuous Drain Current (ID) 450mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.45A
Drain to Source Breakdown Voltage 40V