Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 26.35 ns
Drive Voltage (Max Rds On,Min Rds On) 3.3V 10V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 2925pF @ 12.5V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Rds On (Max) @ Id, Vgs 1.9m Ω @ 25A, 10V
Turn On Delay Time 6.53 ns
Element Configuration Single
Power Dissipation-Max 2.2W Ta
Base Part Number MCP87018
Time@Peak Reflow Temperature-Max (s) 40
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ