LND250K1-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 500V 1KOhm
PDF
/
Buying Options
Total Price: USD $0.47
Unit Price: USD $0.4664
≥1 USD $0.4664
≥10 USD $0.396
≥100 USD $0.385
Inventory: 1170
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature HIGH INPUT IMPEDANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Power Dissipation 360mW
Turn On Delay Time 90 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13mA Tj
Rise Time 450ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 450 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 13mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
FET Feature Depletion Mode
Dimensions
Height 950μm
Length 2.9mm
Width 1.3mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
LND250K1-G+price,LND250K1-G+datasheet,LND250K1-G+in stock,buy+LND250K1-G,finder+LND250K1-G,LND250K1-G+tutorials,LND250K1-G+download