LND150N8-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 500V 0.03A 4-Pin(3+Tab) SOT-89
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Buying Options
Total Price: USD $0.7
Unit Price: USD $0.6952
≥1 USD $0.6952
≥10 USD $0.572
≥100 USD $0.528
Inventory: 25254
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 2.6mm
Length 4.6mm
Height 1.6mm
Technical
FET Feature Depletion Mode
Drain to Source Breakdown Voltage 500V
Drain Current-Max (Abs) (ID) 0.03A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 30mA
Turn-Off Delay Time 100 ns
Fall Time (Typ) 450 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 0V
Rise Time 450 ns
Current - Continuous Drain (Id) @ 25°C 30mA Tj
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 90 ns
Case Connection SOURCE
Power Dissipation 1.2W
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Number of Channels 1
Number of Elements 1
JESD-30 Code R-PSSO-F3
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Form FLAT
Technology MOSFET (Metal Oxide)
Additional Feature HIGH INPUT IMPEDANCE
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 52.786812mg
Number of Pins 4
Package / Case TO-243AA
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Supply Chain
Factory Lead Time 5 Weeks
Alternative Model
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