LND150N3-G-P014
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Box (TB) Through Hole N-Channel Single Mosfet Transistor 30mA Tj 30mA 740mW Ta 1.3mus
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Buying Options
Total Price: USD $0.6
Unit Price: USD $0.5984
≥1 USD $0.5984
≥10 USD $0.484
≥100 USD $0.4576
Inventory: 2025
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code O-PBCY-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element Configuration Single
Turn On Delay Time 90 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30mA Tj
Rise Time 450ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 1.3 μs
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 30mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.03A
Drain to Source Breakdown Voltage 500V
FET Feature Depletion Mode
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
RoHS Status ROHS3 Compliant
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