FET Feature Depletion Mode
Drain to Source Breakdown Voltage 9V
Drain Current-Max (Abs) (ID) 0.33A
Gate to Source Voltage (Vgs) 600mV
Continuous Drain Current (ID) 330mA
Drive Voltage (Max Rds On,Min Rds On) 0V
Current - Continuous Drain (Id) @ 25°C 330mA Tj
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 5V
Rds On (Max) @ Id, Vgs 1.4 Ω @ 100mA, 0V
Transistor Application SWITCHING
Turn On Delay Time 3.8 ns
Element Configuration Single
Power Dissipation-Max 360mW Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -25°C~125°C TJ