FET Feature Depletion Mode
Pulsed Drain Current-Max (IDM) 1A
Drain to Source Breakdown Voltage 250V
Drain-source On Resistance-Max 6Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 360mA
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Current - Continuous Drain (Id) @ 25°C 360mA Tj
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Rds On (Max) @ Id, Vgs 6 Ω @ 200mA, 0V
Transistor Application SWITCHING
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature FAST SWITCHING
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ