FET Feature Depletion Mode
Drain to Source Breakdown Voltage 250V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.1A
Turn-Off Delay Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Gate Charge (Qg) (Max) @ Vgs 7.04nC @ 1.5V
Current - Continuous Drain (Id) @ 25°C 1.1A Tj
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Rds On (Max) @ Id, Vgs 3.5 Ω @ 1A, 0V
Transistor Application SWITCHING
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ