DN2535N5-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 350V 0.5A 3-Pin TO-220 Tube
PDF
/
Buying Options
Total Price: USD $1.49
Unit Price: USD $1.4872
≥1 USD $1.4872
≥10 USD $1.232
≥100 USD $1.1264
Inventory: 826
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 15W Tc
Element Configuration Single
Power Dissipation 15W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25 Ω @ 120mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Tj
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 500mA
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage 350V
Pulsed Drain Current-Max (IDM) 0.5A
FET Feature Depletion Mode
Dimensions
Height 9.02mm
Length 10.67mm
Width 4.83mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
DN2535N5-G+price,DN2535N5-G+datasheet,DN2535N5-G+in stock,buy+DN2535N5-G,finder+DN2535N5-G,DN2535N5-G+tutorials,DN2535N5-G+download