DN2535N3-G-P013
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET, DEPLETION-MODE, 350V, 25 Ohm, 3 TO-92 AMMO
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Feedback Cap-Max (Crss) 5 pF
FET Feature Depletion Mode
Drain to Source Breakdown Voltage 350V
Continuous Drain Current (ID) 120mA
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 0V
Current - Continuous Drain (Id) @ 25°C 120mA Tj
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Rds On (Max) @ Id, Vgs 25 Ω @ 120mA, 0V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation-Max 1W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code O-PBCY-T3
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 5 Weeks
Alternative Model
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