FET Feature Depletion Mode
Pulsed Drain Current-Max (IDM) 0.9A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 230mA
Drive Voltage (Max Rds On,Min Rds On) 0V
Current - Continuous Drain (Id) @ 25°C 230mA Tj
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Rds On (Max) @ Id, Vgs 10 Ω @ 300mA, 0V
Transistor Application SWITCHING
Power Dissipation-Max 1.6W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ