FET Feature Depletion Mode
Drain-source On Resistance-Max 6Ohm
Drain Current-Max (Abs) (ID) 0.2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200mA
Drive Voltage (Max Rds On,Min Rds On) 0V
Drain to Source Voltage (Vdss) 90V
Current - Continuous Drain (Id) @ 25°C 200mA Tj
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Rds On (Max) @ Id, Vgs 6 Ω @ 200mA, 0V
Transistor Application SWITCHING
Power Dissipation-Max 490mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ