VMO650-01F
RoHS 
RoHS compliant
RoHS compliantPackage Y3-DCB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 100V 690A 4-Pin Y3-DCB
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Buying Options
Total Price: USD $191.41
Unit Price: USD $191.4088
≥1 USD $191.4088
Inventory: 15
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Y3-DCB
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2000
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 690A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number VMO
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2500W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5kW
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 6V @ 130mA
Input Capacitance (Ciss) (Max) @ Vds 59000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 690A Tc
Gate Charge (Qg) (Max) @ Vgs 2300nC @ 10V
Rise Time 500 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 200 ns
Turn-Off Delay Time 800 ns
Continuous Drain Current (ID) 690A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0018Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 2780A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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