VMO580-02F
RoHS 
RoHS compliant
RoHS compliantPackage Y3-Li
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 580A MODULE
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Buying Options
Total Price: USD $414.19
Unit Price: USD $414.193692
≥1 USD $414.193692
≥200 USD $165.266539
≥500 USD $159.743169
≥1000 USD $157.014963
Inventory: 1425
Minimum: 1
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Y3-Li
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2002
Series HiPerFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 11
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 580A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number VMO
JESD-30 Code R-XUFM-X11
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 430A, 10V
Vgs(th) (Max) @ Id 4V @ 50mA
Current - Continuous Drain (Id) @ 25°C 580A Tc
Gate Charge (Qg) (Max) @ Vgs 2750nC @ 10V
Rise Time 500ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 500 ns
Turn-Off Delay Time 900 ns
Continuous Drain Current (ID) 580A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0038Ohm
Drain to Source Breakdown Voltage 200V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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