VMO550-01F
RoHS 
RoHS compliant
RoHS compliantPackage Y3-DCB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 100V 590A 4-Pin Y3-DCB
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Buying Options
Total Price: USD $770.23
Unit Price: USD $770.231166
≥1 USD $770.231166
≥200 USD $307.327571
≥500 USD $297.058067
≥1000 USD $291.983708
Inventory: 1134
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Pulsed Drain Current-Max (IDM) 2360A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.0021Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 590A
Turn-Off Delay Time 800 ns
Fall Time (Typ) 200 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 500ns
Gate Charge (Qg) (Max) @ Vgs 2000nC @ 10V
Current - Continuous Drain (Id) @ 25°C 590A Tc
Input Capacitance (Ciss) (Max) @ Vds 50000pF @ 25V
Vgs(th) (Max) @ Id 6V @ 110mA
Rds On (Max) @ Id, Vgs 2.1m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 2.2kW
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2200W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
Base Part Number VMO
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series HiPerFET?
Published 2000
Packaging Bulk
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case Y3-DCB
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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