VMO1200-01F
RoHS 
RoHS compliant
RoHS compliantPackage Y3-Li
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Discrete Semiconductor Modules 1200 Amps 100V
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Buying Options
Total Price: USD $264.49
Unit Price: USD $264.48892
≥1 USD $264.48892
≥10 USD $249.51785
≥100 USD $235.3942
≥500 USD $222.07
≥1000 USD $209.5
≥3000 USD $197.64151
Inventory: 4789
Minimum: 1
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Y3-Li
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tray
Published 2010
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number VMO
Pin Count 4
JESD-30 Code R-XUFM-X4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.35m Ω @ 932A, 10V
Vgs(th) (Max) @ Id 4V @ 64mA
Current - Continuous Drain (Id) @ 25°C 1220A Tc
Gate Charge (Qg) (Max) @ Vgs 2520nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.245kA
Drain Current-Max (Abs) (ID) 1220A
Drain-source On Resistance-Max 0.00125Ohm
DS Breakdown Voltage-Min 100V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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