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IXFK44N50F

IXYS-RF
RoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description IXYS RF IXFK44N50F RF FET Transistor, 500 V, 44 A, 500 W, 500 kHz, TO-264
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Buying Options
Total Price: USD $72.04
Unit Price: USD $72.04325
≥1 USD $72.04325
≥10 USD $69.79175
≥100 USD $67.5412
≥500 USD $65.2897
≥1000 USD $58.5352
Inventory: 1128
Minimum: 1
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerRF?
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.12Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 184A
Avalanche Energy Rating (Eas) 2500 mJ

Compliance

REACH SVHC No SVHC
RoHS Status RoHS Compliant

Alternative Model

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