Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.12Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 184A
Avalanche Energy Rating (Eas) 2500 mJ