IXTY55N075T
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 55A TO-252
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchMV?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19.5m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id 4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 55A
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 75V
Avalanche Energy Rating (Eas) 250 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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