Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 48A
Pulsed Drain Current-Max (IDM) 150A
DS Breakdown Voltage-Min 50V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 150W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ