Avalanche Energy Rating (Eas) 250 mJ
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 44A
Turn-Off Delay Time 36 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Input Capacitance (Ciss) (Max) @ Vds 1262pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Rds On (Max) @ Id, Vgs 30m Ω @ 22A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 130W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ