Avalanche Energy Rating (Eas) 180 mJ
Pulsed Drain Current-Max (IDM) 8A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 2Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.6A
Turn-Off Delay Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 409pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 50μA
Rds On (Max) @ Id, Vgs 2 Ω @ 1.8A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 70W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ