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IXTY2N100P

IXYS
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 2A TO-252
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Buying Options
Total Price: USD $2.91
Unit Price: USD $2.9128
≥1 USD $2.9128
≥10 USD $2.306735
≥100 USD $1.977237
≥500 USD $1.757545
≥1000 USD $1.504897
≥3000 USD $1.417029
Inventory: 1116
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 150 mJ
Pulsed Drain Current-Max (IDM) 5A
Drain to Source Breakdown Voltage 1kV
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-252AA
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 80 ns
Fall Time (Typ) 27 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 29 ns
Gate Charge (Qg) (Max) @ Vgs 24.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 86W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 86W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series Polar?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount

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