IXTY1R6N50D2
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 1.6A DPAK
PDF
/
Buying Options
Total Price: USD $1.77
Unit Price: USD $1.76747
≥1 USD $1.76747
≥10 USD $1.66742
≥100 USD $1.57304
≥500 USD $1.484
≥1000 USD $1.4
≥3000 USD $1.32075
Inventory: 3479
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Power Dissipation 100W
Case Connection DRAIN
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 2.3 Ω @ 800mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.6A Tc
Gate Charge (Qg) (Max) @ Vgs 23.7nC @ 5V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 20V
FET Feature Depletion Mode
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IXTY1R6N50D2+price,IXTY1R6N50D2+datasheet,IXTY1R6N50D2+in stock,buy+IXTY1R6N50D2,finder+IXTY1R6N50D2,IXTY1R6N50D2+tutorials,IXTY1R6N50D2+download