Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Pure Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 800mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.6A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V
Drain to Source Voltage (Vdss) 1000V
Continuous Drain Current (ID) 1.6A
FET Feature Depletion Mode