Avalanche Energy Rating (Eas) 75 mJ
DS Breakdown Voltage-Min 800V
Pulsed Drain Current-Max (IDM) 2A
Drain Current-Max (Abs) (ID) 1A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs(th) (Max) @ Id 4V @ 50μA
Rds On (Max) @ Id, Vgs 14 Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Pure Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ