IXTY08N50D2
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 800MA DPAK
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Buying Options
Total Price: USD $6.91
Unit Price: USD $6.91315
≥1 USD $6.91315
≥10 USD $5.67245
≥100 USD $5.4948
≥500 USD $5.31715
≥1000 USD $5.14045
≥3000 USD $4.60845
Inventory: 5003
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
FET Feature Depletion Mode
Continuous Drain Current (ID) 800mA
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 12.7nC @ 5V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Input Capacitance (Ciss) (Max) @ Vds 312pF @ 25V
Rds On (Max) @ Id, Vgs 4.6 Ω @ 400mA, 0V
Transistor Application AMPLIFIER
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 60W
Power Dissipation-Max 60W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 19 Weeks
Alternative Model
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