IXTY08N100P
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 800MA TO-252
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Buying Options
Total Price: USD $2.98
Unit Price: USD $2.9832
≥1 USD $2.9832
≥10 USD $2.362175
≥100 USD $2.024757
≥500 USD $1.799785
≥1000 USD $1.541065
≥3000 USD $1.451076
Inventory: 15
Minimum: 1
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Technical Details
Technical
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.8A
Drain to Source Breakdown Voltage 1kV
Avalanche Energy Rating (Eas) 80 mJ
Continuous Drain Current (ID) 800mA
Turn-Off Delay Time 35 ns
Fall Time (Typ) 34 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 37 ns
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Vgs(th) (Max) @ Id 4V @ 50μA
Rds On (Max) @ Id, Vgs 20 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 42W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 42W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series Polar?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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