IXTY08N100D2-TRL
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXTY08N100D2 TRL
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Technical Details
Technical
FET Feature Depletion Mode
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 0V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 5V
Current - Continuous Drain (Id) @ 25°C 800mA Tj
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Vgs(th) (Max) @ Id 4V @ 25μA
Rds On (Max) @ Id, Vgs 21 Ω @ 400mA, 0V
FET Type N-Channel
Power Dissipation-Max 60W Tc
Technology MOSFET (Metal Oxide)
Part Status Active
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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