IXTY08N100D2
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-Channel 1000 V 21 Ohm Surface Mount Power Mosfet - TO-252AA
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Buying Options
Total Price: USD $0.38
Unit Price: USD $0.37874
≥1 USD $0.37874
≥10 USD $0.3573
≥100 USD $0.33708
≥500 USD $0.318
≥1000 USD $0.3
≥3000 USD $0.28302
Inventory: 2025
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Pure Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 60W Tc
Power Dissipation 60W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21 Ω @ 400mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 5V
Drain to Source Voltage (Vdss) 1000V
Vgs (Max) ±20V
Continuous Drain Current (ID) 800mA
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
FET Feature Depletion Mode
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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