FET Feature Depletion Mode
Pulsed Drain Current-Max (IDM) 0.8A
Drain to Source Breakdown Voltage 500V
Drain Current-Max (Abs) (ID) 0.2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200mA
Turn-Off Delay Time 28 ns
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Rds On (Max) @ Id, Vgs 30 Ω @ 50mA, 0V
Transistor Application SWITCHING
Element Configuration Single
Power Dissipation-Max 1.1W Ta 25W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ