IXTY02N120P
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1200V 0.2A DPAK
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Buying Options
Total Price: USD $2.07
Unit Price: USD $2.068
≥1 USD $2.068
≥10 USD $1.662443
≥100 USD $1.367837
≥500 USD $1.157376
≥1000 USD $0.982018
≥3000 USD $0.932914
Inventory: 1283
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 40 mJ
Pulsed Drain Current-Max (IDM) 0.6A
Drain to Source Breakdown Voltage 1.2kV
Drain-source On Resistance-Max 0.075Ohm
Drain Current-Max (Abs) (ID) 0.2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200mA
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 75 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 33W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 33W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series Polar?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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