IXTY01N80
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 0.1A TO-252AA
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Pulsed Drain Current-Max (IDM) 0.4A
Drain to Source Breakdown Voltage 800V
Drain Current-Max (Abs) (ID) 0.1A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-252AA
Continuous Drain Current (ID) 100mA
Turn-Off Delay Time 28 ns
Fall Time (Typ) 28 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 12ns
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100mA Tc
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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